HUASHUO HSM0056

HUASHUO · FETs & Power MOSFETs · MPN HSM0056

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Specifications

Gate Charge(Qg)17.9nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)849pF

Technical details

N-Channel 100V 9.5A 3.1W Surface Mount SOP-8

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