HUASHUO HSM0026

HUASHUO · FETs & Power MOSFETs · MPN HSM0026

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.93nF

Technical details

N-Channel 100V 7.5A 2.5W Surface Mount SOP-8

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