HUASHUO · FETs & Power MOSFETs · MPN HSL3N10
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| Gate Charge(Qg) | 5.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 100mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
| Type | N-Channel |
100V 3.5A 1.8V 2.5W 100mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS