HUASHUO · FETs & Power MOSFETs · MPN HSL2N15
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 119pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 840pF |
| Type | N-Channel |
150V 2A 1.8V 2W 210mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS