HUASHUO HSL10P06

HUASHUO · FETs & Power MOSFETs · MPN HSL10P06

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Specifications

Gate Charge(Qg)9.6nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
RDS(on)70mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 P-Channel
Input Capacitance(Ciss)1.431nF

Technical details

P-Channel 60V 10A 1.5W Surface Mount SOT-223

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