HUASHUO · FETs & Power MOSFETs · MPN HSL10N06
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 31W |
| RDS(on) | 36mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.227nF |
N-Channel 60V 10A 31W Surface Mount SOT-223