HUASHUO HSL03N20

HUASHUO · FETs & Power MOSFETs · MPN HSL03N20

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)600mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

N-Channel 200V 1.5A 42W Surface Mount SOT-223

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