HUASHUO · FETs & Power MOSFETs · MPN HSK7P10
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 7A |
| Output Capacitance(Coss) | 58pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 120mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.22nF |
| Type | P-Channel |
100V 7A 1.8V 1.7W 120mΩ@10V 1 P-Channel P-Channel SOT-89 Single FETs, MOSFETs RoHS