HUASHUO HSK5N04

HUASHUO · FETs & Power MOSFETs · MPN HSK5N04

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)51pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)452pF
TypeN-Channel

Technical details

N-Channel 40V 5A 1.7W Surface Mount SOT-89

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