HUASHUO HSK4101

HUASHUO · FETs & Power MOSFETs · MPN HSK4101

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)6.4nC@4.5V
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)70mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)620pF

Technical details

P-Channel 40V 5.8A 1.4W Surface Mount SOT-89

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