HUASHUO · FETs & Power MOSFETs · MPN HSK3N10
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| Gate Charge(Qg) | 5.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 20pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF |
| RDS(on) | 100mΩ@10V;130mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
| Type | N-Channel |
100V 3A 1.8V 1.7W 1 N-channel N-Channel SOT-89 Single FETs, MOSFETs RoHS