HUASHUO HSK3113

HUASHUO · FETs & Power MOSFETs · MPN HSK3113

No reviews yet — be the first to review HUASHUO HSK3113.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)9.8nC
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.5W
RDS(on)-
Reverse Transfer Capacitance (Crss@Vds)125pF
Number1 P-Channel
Input Capacitance(Ciss)1.13nF

Technical details

P-Channel 30V 4A 1.5W Surface Mount SOT-89

Related FETs & Power MOSFETs