HUASHUO · FETs & Power MOSFETs · MPN HSK10N10
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 75mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.19nF |
N-Channel 100V 10A 1.7W Surface Mount SOT-89