HUASHUO · FETs & Power MOSFETs · MPN HSK02N20
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF |
| RDS(on) | 1.1Ω@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 900pF |
| Type | N-Channel |
N-Channel 200V 2A 1.25W Surface Mount SOT-89