HUASHUO HSK0008

HUASHUO · FETs & Power MOSFETs · MPN HSK0008

No reviews yet — be the first to review HUASHUO HSK0008.

Specifications

Gate Charge(Qg)9.7nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)16.4pF
RDS(on)310mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)508pF

Technical details

N-Channel 100V 2.2A 1.5W Surface Mount SOT-89

Related FETs & Power MOSFETs