HUASHUO HSH90P06

HUASHUO · FETs & Power MOSFETs · MPN HSH90P06

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Specifications

Gate Charge(Qg)170nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation210W
RDS(on)7.5mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 60V 85A 210W Surface Mount TO-263

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