HUASHUO · FETs & Power MOSFETs · MPN HSH8129
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 380nC@10V |
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 670pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 620pF |
| RDS(on) | 9mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 24.3nF |
P-Channel 80V 120A 210W Surface Mount TO-263