HUASHUO · FETs & Power MOSFETs · MPN HSH80P10
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| Gate Charge(Qg) | 180nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 11.66nF |
P-Channel 100V 80A 210W Surface Mount TO-263