HUASHUO HSH4129

HUASHUO · FETs & Power MOSFETs · MPN HSH4129

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Specifications

Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)390nC@10V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)1.36nF
RDS(on)2.3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 40V 180A 200W Surface Mount TO-263

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