HUASHUO HSH4119

HUASHUO · FETs & Power MOSFETs · MPN HSH4119

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)190nC@10V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
RDS(on)4.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)660pF
Number1 P-Channel
Input Capacitance(Ciss)10.7nF
TypeP-Channel

Technical details

P-Channel 40V 150A 200W Surface Mount TO-263

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