HUASHUO HSH3018B

HUASHUO · FETs & Power MOSFETs · MPN HSH3018B

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Specifications

Gate Charge(Qg)56.9nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)205A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation187W
RDS(on)2.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)525pF
Number1 N-channel
Input Capacitance(Ciss)5.85nF
TypeN-Channel

Technical details

N-Channel 30V 205A 187W Surface Mount TO-263

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