HUASHUO HSH200N02

HUASHUO · FETs & Power MOSFETs · MPN HSH200N02

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)343pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)129pF
RDS(on)33mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.082nF
TypeN-Channel

Technical details

N-Channel 200V 70A 200W Surface Mount TO-263

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