HUASHUO HSH1502

HUASHUO · FETs & Power MOSFETs · MPN HSH1502

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Specifications

Gate Charge(Qg)128nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)190A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation410W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.66nF
TypeN-Channel

Technical details

150V 190A 3V 410W 4mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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