HUASHUO HSH120N20

HUASHUO · FETs & Power MOSFETs · MPN HSH120N20

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)467pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation500W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 N-channel
Input Capacitance(Ciss)3.52nF
TypeN-Channel

Technical details

N-Channel 200V 120A 500W Surface Mount TO-263

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