HUASHUO · FETs & Power MOSFETs · MPN HSH110P04
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| Gate Charge(Qg) | 115nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 722pF |
| RDS(on) | 5.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.09nF |
P-Channel 40V 110A 200W Surface Mount TO-263