HUASHUO HSH10P20

HUASHUO · FETs & Power MOSFETs · MPN HSH10P20

No reviews yet — be the first to review HUASHUO HSH10P20.

Specifications

Configuration-
Gate Charge(Qg)82nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)810mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.155nF

Technical details

P-Channel 200V 10A 80W Surface Mount TO-263

Related FETs & Power MOSFETs