HUASHUO HSH100N15

HUASHUO · FETs & Power MOSFETs · MPN HSH100N15

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)100nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation178W
RDS(on)7.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)9.5pF
Number1 N-channel
Input Capacitance(Ciss)5.88nF

Technical details

N-Channel 150V 100A 178W Surface Mount TO-263

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