HUASHUO · FETs & Power MOSFETs · MPN HSH047P06
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 280nC@10V |
| Output Capacitance(Coss) | 1.701nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 183W |
| Reverse Transfer Capacitance (Crss@Vds) | 680pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 17.9nF |
| Type | P-Channel |
P-Channel 60V 150A 183W Surface Mount TO-263