HUASHUO · FETs & Power MOSFETs · MPN HSH0129
No reviews yet — be the first to review HUASHUO HSH0129.
| Gate Charge(Qg) | 230nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 12mΩ@10V |
| Number | 1 P-Channel |
| Type | P-Channel |
100V 130A 1.9V 250W 12mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS