HUASHUO HSH0084A

HUASHUO · FETs & Power MOSFETs · MPN HSH0084A

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Specifications

Gate Charge(Qg)112nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.621nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation260W
RDS(on)3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)64pF
Number1 N-channel
Input Capacitance(Ciss)7.425nF
TypeN-Channel

Technical details

100V 180A 3V 260W 3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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