HUASHUO · FETs & Power MOSFETs · MPN HSH0076A
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| Gate Charge(Qg) | 200nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 308A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 430W |
| RDS(on) | 1.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 388pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.37nF |
N-Channel 100V 308A 430W Surface Mount TO-263