HUASHUO · FETs & Power MOSFETs · MPN HSG8205
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 6.1nC@4.5V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF |
| RDS(on) | 38mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 522pF |
| Type | N-Channel |
20V 9A 1.5V 1.5W 38mΩ@2.5V 2 N-Channel N-Channel TSSOP-8 Single FETs, MOSFETs RoHS