HUASHUO · FETs & Power MOSFETs · MPN HSCE4117
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| Gate Charge(Qg) | 59nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 313pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 8.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.67nF |
| Type | P-Channel |
40V 50A 1.65V 52W 8.2mΩ@10V 1 P-Channel P-Channel DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS