HUASHUO HSCE3031

HUASHUO · FETs & Power MOSFETs · MPN HSCE3031

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)5.2mΩ@10V;7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.45nF
TypeP-Channel

Technical details

30V 50A 1.6V 52W 1 P-Channel P-Channel DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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