HUASHUO HSCE2631

HUASHUO · FETs & Power MOSFETs · MPN HSCE2631

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Specifications

Gate Charge(Qg)76nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)509pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)331pF
RDS(on)8.5mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)4.4nF
TypeP-Channel

Technical details

P-Channel 20V 50A 83W Surface Mount DFN-8(3.3x3.3)

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