HUASHUO · FETs & Power MOSFETs · MPN HSCE2530
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| Gate Charge(Qg) | 77nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 321pF |
| RDS(on) | 2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.307nF |
N-Channel 20V 50A 83W DFN3.3x3.3-8