HUASHUO · FETs & Power MOSFETs · MPN HSCE1218
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 41nC@4.5V |
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 1.42nF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.13nF |
| RDS(on) | 5.6mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.91nF |
P-Channel 12V 60A 83W Surface Mount DFN-8(3.3x3.3)