HUASHUO · FETs & Power MOSFETs · MPN HSCC8233
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| Gate Charge(Qg) | 22nC@4.5V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 156pF |
| RDS(on) | 7.2mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.647nF |
N-Channel Array 20V 11A 1.56W Surface Mount TDFN-6-EP(2x3)