HUASHUO HSCC8233

HUASHUO · FETs & Power MOSFETs · MPN HSCC8233

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Specifications

Gate Charge(Qg)22nC@4.5V
Configuration-
Drain to Source Voltage20V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)156pF
RDS(on)7.2mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.647nF

Technical details

N-Channel Array 20V 11A 1.56W Surface Mount TDFN-6-EP(2x3)

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