HUASHUO · FETs & Power MOSFETs · MPN HSCC8204
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| Gate Charge(Qg) | 22nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF |
| RDS(on) | 6.7mΩ@3.7V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.647nF |
N-Channel Array 20V 9.5A 1.56W Surface Mount DFN-6-EP(3x2)