HUASHUO · FETs & Power MOSFETs · MPN HSCB8236
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 18mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 640pF |
N-Channel Array 20V 6A 1.4W Surface Mount DFN2x2-6L