HUASHUO HSCB3103

HUASHUO · FETs & Power MOSFETs · MPN HSCB3103

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Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)12.5nC@4.5V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)25mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.345nF
TypeP-Channel

Technical details

P-Channel 30V 9A Surface Mount DFN-6L(2x2)

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