HUASHUO · FETs & Power MOSFETs · MPN HSCB3014
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| Gate Charge(Qg) | 9.63nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 131pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF |
| RDS(on) | 17mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 940pF |
| Type | N-Channel |
N-Channel 30V 10A 26W Surface Mount DFN2x2-6L