HUASHUO HSCB2903

HUASHUO · FETs & Power MOSFETs · MPN HSCB2903

No reviews yet — be the first to review HUASHUO HSCB2903.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)10.1nC@4.5V
Output Capacitance(Coss)82pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
RDS(on)100mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)73pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)677pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V 5A 1.6W Surface Mount DFN-6L-EP(2x2)

Related FETs & Power MOSFETs