HUASHUO · FETs & Power MOSFETs · MPN HSCB2307
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| Gate Charge(Qg) | 17nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 489pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF |
| RDS(on) | 18mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.1nF |
| Type | P-Channel |
P-Channel 20V 8A 2.2W Surface Mount DFN-6L(2x2)