HUASHUO · FETs & Power MOSFETs · MPN HSCB20N06
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Output Capacitance(Coss) | 265pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 12mΩ@10V;16mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 807pF |
| Type | N-Channel |
60V 20A 1.6V 3W 1 N-channel N-Channel DFN-6L(2x2) Single FETs, MOSFETs RoHS