HUASHUO · FETs & Power MOSFETs · MPN HSCB20D05
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 27.3nC@4.5V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 187pF |
| RDS(on) | 35mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 2.28nF |
| Type | P-Channel |
P-Channel 20V 5A 1.5W Surface Mount DFN2x2-6L