HUASHUO · FETs & Power MOSFETs · MPN HSCB2016
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| Gate Charge(Qg) | 12nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 18W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 910pF |
| Type | N-Channel |
N-Channel 20V 16A 18W Surface Mount DFN-6L(2x2)