HUASHUO · FETs & Power MOSFETs · MPN HSCB2004A
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 7.6nC@4.5V;8.8nC@4.5V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 69pF;92pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF;83pF |
| RDS(on) | 16mΩ@4.5V;27mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 557pF;877pF |
| Type | N-Channel + P-Channel |
20V 5A 700mV 1.6W 1 N-Channel + 1 P-Channel N-Channel + P-Channel DFN-6L(2x2) Single FETs, MOSFETs RoHS