HUASHUO HSCB1216

HUASHUO · FETs & Power MOSFETs · MPN HSCB1216

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Specifications

Gate Charge(Qg)13nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)304pF
RDS(on)15mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF
TypeP-Channel

Technical details

P-Channel 12V 16A 2.2W Surface Mount DFN-6L(2x2)

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