HUASHUO · FETs & Power MOSFETs · MPN HSCB1214
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| Gate Charge(Qg) | 16nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 294pF |
| RDS(on) | 17mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.4nF |
| Type | P-Channel |
P-Channel 12V 14A 3W Surface Mount DFN-6L(2x2)